Part Number Hot Search : 
225718 CM32TR TDA750 B772SL STM32L0 133BG AU6981 HIP6007
Product Description
Full Text Search
 

To Download BDV64 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION With TO-3PN package Complement to type BDV65/65A/65B/65C DARLINGTON High DC current gain APPLICATIONS For use in general purpose amplifier applications.
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
BDV64/64A/64B/64C
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Tc=25ae )
SYMBOL

PARAMETER
BDV64 BDV64A BDV64B
VCBO
Collector-base voltage
ANG INCH
VCEO Collector-emitter voltage VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current
BDV64C BDV64 BDV64A
SEM E
Open emitter
DUC ICON
CONDITIONS
VALUE -60
TOR
UNIT
-80 V
-100 -120 -60 -80
Open base BDV64B BDV64C Open collector -100 -120 -5 -12 -15 -0.5 TC=25ae 125
V
V A A A W
Collector power dissipation Ta=25ae Junction temperature Storage temperature 3.5 150 -65~150 ae ae
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER BDV64 BDV64A IC=-30mA, IB=0 BDV64B BDV64C VCEsat VBE Collector-emitter saturation voltage Base-emitter on voltage BDV64 BDV64A BDV64B BDV64C IC=-5A ,IB=-20mA IC=-5A ; VCE=-4V VCB=-60V, IE=0 VCB=-30V, IE=0;TC=150ae VCB=-80V, IE=0 VCB=-40V, IE=0;TC=150ae VCB=-100V, IE=0 VCB=-50V, IE=0;TC=150ae VCB=-120V, IE=0 VCB=-60V, IE=0;TC=150ae VCE=-30V, IB=0 CONDITIONS
BDV64/64A/64B/64C
SYMBOL
MIN -60 -80
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
V -100 -120 -2.0 -2.5 -0.4 -2.0 -0.4 -2.0 -0.4 -2.0 V V
ICBO
Collector cut-off current
mA
ICEO IEBO hFE VEC

BDV64 BDV64A BDV64B
Collector cut-off current
Emitter cut-off current DC current gain
IN
ANG CH
BDV64C
SEM E
VEB=-5V; IC=0 IE=-10A
VCE=-40V, IB=0 VCE=-50V, IB=0 VCE=-60V, IB=0
OND IC
TOR UC
-2 mA -5 mA
-0.4 -2.0
IC=-5A ; VCE=-4V
1000 -3.5 V
Diode forward voltage
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 1.0 UNIT ae /W
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
BDV64/64A/64B/64C
SEM GE
HAN INC
OND IC
TOR UC
Fig.2 Outline dimensions(unindicated tolerance:A
0.1mm)
3


▲Up To Search▲   

 
Price & Availability of BDV64

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X